Name: FDS6680S
Brand: ON Semiconductor
SKU: FDS6680S
Price: 0.48000 USD
Availability: InStock

new-10%

FDS6680S

Manufacturer part number:FDS6680S

Manufacturer:ON Semiconductor

Description:FDS6680S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS6680S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	11MOhm
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11.5A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDS6680S Product Details

FDS6680S Description

FDS6680S is a type of N-channel logic-level PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is specifically designed to improve the overall efficiency of DC-DC converters through either synchronous or conventional switching PWM controllers. It features a low gate charge, fast switching speed, as well as high current and power handling capability.