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FQI6N60CTU

FQI6N60CTU

FQI6N60CTU

ON Semiconductor

Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) I2PAK Rail

SOT-23

FQI6N60CTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:12617 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.778379$0.778379
10$0.734320$7.3432
100$0.692754$69.2754
500$0.653541$326.7705
1000$0.616549$616.549

About FQI6N60CTU

The FQI6N60CTU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) I2PAK Rail.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI6N60CTU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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