IKZ50N65NH5XKSA1 Description
The IKZ50N65NH5XKSA1 is a High speed 5 IGBT in TRENCHSTOP? 5 technology copacked with RAPID 2 fast and soft antiparallel diode. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKZ50N65NH5XKSA1 Features
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
IGBT copacked with RAPID 2 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Ultra low loss switching thanks to Kelvin emitter pin in
combination with TRENCHSTOP? 5
Best-in-class efficiency in hard switching and resonant topologies
IKZ50N65NH5XKSA1 Applications
