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IRGB30B60KPBF

IRGB30B60KPBF

IRGB30B60KPBF

Infineon Technologies

IRGB30B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB30B60KPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation370W
Current Rating78A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation370W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time28ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 78A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.35V
Turn On Time74 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
Turn Off Time-Nom (toff) 237 ns
IGBT Type NPT
Gate Charge102nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 46ns/185ns
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 42ns
Height 16.51mm
Length 10.6426mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2055 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.919440$9.91944
10$9.357962$93.57962
100$8.828266$882.8266
500$8.328553$4164.2765
1000$7.857126$7857.126

IRGB30B60KPBF Product Details

IRGB30B60KPBF Description


The IRGB30B60KPBF from IR/INFINEON manufacturer is a IGBTs - Single with Trans IGBT Chip N-CH 600V 78A. The IRGB30B60KPBF is IGBT NPT 600V 78A 370W Through Hole TO-220AB Trans IGBT Chip N-CH 600V 78A 370000mW 3-Pin(3+Tab) TO-220AB Tube IGBT Transistors 600V UltraFast 10-30kHz IGBT.



IRGB30B60KPBF Features


  • Lead-Free

  • Square RBSOA

  • 10μs Short Circuit Capability

  • Positive VCE (on) Temperature Coefficient

  • Maximum Junction Temperature rated at 175°C

  • Low VCE (on) Non Punch Through IGBT Technology



IRGB30B60KPBF Applications


  • IF application


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