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IRG4BC20FD-STRR

IRG4BC20FD-STRR

IRG4BC20FD-STRR

Infineon Technologies

IRG4BC20FD-STRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20FD-STRR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Turn On Time63 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 610 ns
Gate Charge27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:1475 items

IRG4BC20FD-STRR Product Details

IRG4BC20FD-STRR Benefits

Generation 4 IGBTs offer the highest efficiencies

available

IGBTs optimized for specific application conditions

HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less/no snubbing

Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs



IRG4BC20FD-STRR Features

Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

Industry-standard D2Pak package




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