FGB30N6S2 Description
FGB30N6S2 is a type of 600V, SMPS II Series N-Channel IGBT with an Anti-Parallel StealthTM diode developed by ON Semiconductor. It is characterized by the fast switching speed of the SMPS IGBTs, lower gate charge, lower plateau voltage, and high avalanche capability (UIS). Thus it is ideally suitable for high-voltage switched mode power supply applications. Moreover, the FGB30N6S2 IGBT is able to shorten delay times and reduce the power requirement of the gate drive.
FGB30N6S2 Features
Fast switching speed of the SMPS IGBTs
Lower gate charge
Lower plateau voltage
High avalanche capability (UIS)
FGB30N6S2 Applications
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
