IRG7PH35UD-EP Description
IRG7PH35UD-EP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PH35UD-EP IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.
IRG7PH35UD-EP Features
Tight parameter distribution
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Ultra-fast soft recovery co-pak diode
IRG7PH35UD-EP Applications
U.P.S.
Welding
Solar Inverter
Induction Heating
