Name: IRG4BC10UDPBF
Brand: Infineon Technologies
SKU: IRG4BC10UDPBF
Availability: InStock

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IRG4BC10UDPBF

Manufacturer part number:IRG4BC10UDPBF

Manufacturer:Infineon Technologies

Description:IRG4BC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC10UDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Current Rating	8.5A
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	40 ns
Transistor Application	POWER CONTROL
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	87 ns
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	8.5A
Reverse Recovery Time	28 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.6V
Turn On Time	56 ns
Test Condition	480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 5A
Turn Off Time-Nom (toff)	345 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	34A
Td (on/off) @ 25°C	40ns/87ns
Switching Energy	140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	210ns
Height	15.24mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRG4BC10UDPBF Product Details

IRG4BC10UDPBF Description

IRG4BC10UDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 80 kHz in hard switching. As a Generation 4 IGBT, it is able to offer the highest efficiencies available, and lower losses than MOSFET's conduction and diode losses. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.