IHW40N60RFKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IHW40N60RFKSA1 Features
·Powerful monolithic body diode with low forward voltage designed for soft commutation only
·TRENCHSTOP technology applications offers: -very tight parameter distribution
-high ruggedness temperature stable behavior -low VcEsat
-easy parallel switching capability due to positive temperature coefficient in VCEsat
·Low EMI
·Qualified according to JESD-022 for target applications
·Pb-free lead plating;RoHScompliant
·Complete product spectrum and PSpice
IHW40N60RFKSA1 Applications
·Inductive cooking
Inverterized microwave ovens
·Resonant converters
·Soft switching applications
