AIGW40N65F5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
AIGW40N65F5XKSA1 Features
High speed F5technology offering:
·Best-in-Class efficiencyin hard switching and resonant topologies
650V breakdown voltage Low gate charge QG
·Maximum junction temperature 175°C·Dynamically stress tested
Qualified according to AEC-Q101·Green package(RoHScompliant)
·Complete product spectrum and PSpice Models
AIGW40N65F5XKSA1 Applications
·Off-board charger·On-board charger·DC/DC converter
·Power-factor correction
