IRG4BC30UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30UDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
23A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
40 ns
Transistor Application
POWER CONTROL
Rise Time
21ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
91 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
23A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
62 ns
Test Condition
480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Turn Off Time-Nom (toff)
300 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
40ns/91ns
Switching Energy
380μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
16.51mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2717 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.367616
$2.367616
10
$2.233600
$22.336
100
$2.107170
$210.717
500
$1.987896
$993.948
1000
$1.875374
$1875.374
IRG4BC30UDPBF Product Details
IRG4BC30UDPBF Description
IRG4BC30UDPBF is a single N-channel IGBT power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of IRG4BC30UDPBF is -55°C~150°C TJ and its maximum power dissipation are 100W. IRG4BC30UDPBF has 3 pins and it is available in TO-220-3 packaging way. The FET Type of IRG4BC30UDPB is N-channel and its Current Rating is 23A.
IRG4BC30UDPBF Features
ECCN Code: EAR99
Transistor Element Material: SILICON
Subcategory: Insulated Gate BIP Transistors
Polarity/Channel Type: N-CHANNEL
IRG4BC30UDPBF Applications
General-purpose amplifier
Switching applications
Power management
Industrial
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