IHW20N120R5XKSA1 Description
The IHW20N120R5XKSA1 is a Reverse Conducting IGBT with a monolithic body diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
IHW20N120R5XKSA1 Features
Low EMI
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC61249-2-21)
Powerful monolithic body diode with low forward voltage designed for soft commutation
TRENCHSTOP? technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
IHW20N120R5XKSA1 Applications
