IGW60T120FKSA1 Description
In TrenchStop? and field-stop technologies, the IGW60T120 is a Low Loss IGBT. Due to the combination of TrenchStop?-cell and field-stop idea, TrenchStop? IGBT technology significantly improves the device's static and dynamic performance. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.
IGW60T120FKSA1 Features
Low gate charge
Low EMI emissions
Low switching losses
High device reliability
Very tight parameter distribution
10μs Short-circuit withstand time
High ruggedness, temperature stable behavior
Lowest Vce (sat) drop for lower conduction losses
Highest efficiency - Low conduction and switching losses
Very soft, fast recovery anti-parallel emitter controlled diode
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
IGW60T120FKSA1 Applications
Alternative Energy
Power Management
Consumer Electronics
Maintenance & Repair
Motor Drive & Control
