Name: STGD3HF60HDT4
Brand: STMicroelectronics
SKU: STGD3HF60HDT4
Price: 1.07000 USD
Availability: InStock

new-10%

STGD3HF60HDT4

Manufacturer part number:STGD3HF60HDT4

Manufacturer:STMicroelectronics

Description:STGD3HF60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD3HF60HDT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	38W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	38W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	7.5A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.95V
Max Breakdown Voltage	600V
Test Condition	400V, 1.5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.95V @ 15V, 1.5A
Gate Charge	12nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	11ns/60ns
Switching Energy	19μJ (on), 12μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGD3HF60HDT4 Product Details

STGD3HF60HDT4 Description

STGD3HF60HDT4 is a type of 4.5 A, 600 V very fast IGBT with an Ultrafast diode developed by STMicroelectronics. It is designed utilizing a new advanced planar technology to deliver more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Moreover, STGD3HF60HDT4 IGBT supports minimal tail current, low switching and conduction losses, and ultrafast soft recovery antiparallel diode.