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IGW03N120H2FKSA1

IGW03N120H2FKSA1

IGW03N120H2FKSA1

Infineon Technologies

IGW03N120H2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW03N120H2FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 62.5W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 9.6A
Turn On Time16.1 ns
Test Condition 800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 403 ns
Gate Charge22nC
Current - Collector Pulsed (Icm) 9.9A
Td (on/off) @ 25°C 9.2ns/281ns
Switching Energy 290μJ
RoHS StatusROHS3 Compliant
In-Stock:3118 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$2.34379$562.5096

IGW03N120H2FKSA1 Product Details

IGW03N120H2FKSA1 Features

Loss reduction in resonant circuits

Temperature stable behavior

Parallel switching capability

Tight parameter distribution

E off optimized for IC =1A




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