IKQ50N120CH3XKSA1 Description
IKQ50N120CH3XKSA1 is a 1200v Low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKQ50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, three-level solar string inverter, and welding applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKQ50N120CH3XKSA1 is in the PG-TO247-3-46 package with 652W power dissipation.
IKQ50N120CH3XKSA1 Features
High efficiency in hard switching and resonant topologies
10μsec short circuit withstand time at Tvj=175°C
Easy paralleling capability due to positive temperature coefficient in VcEsat
Low EMI
Low Gate Charge QG
Very soft, fast recovery full current anti-parallel diode
Maximum junction temperature Tvjmax=175°C
Pb-free lead plating; RoHS compliant
IKQ50N120CH3XKSA1 Applications
Industrial UPS
Charger
Energy Storage
Three-level Solar String Inverter
Welding
