IHW50N65R5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IHW50N65R5XKSA1 Features
·Powerful monolithic reverse-conducting diode with low forward voltage
·TRENCHSTOPtechnology offers: -very tight parameter distribution
-high ruggedness and stable temperature behavior -very low Vcesat and low Eaf!
easy parallel switching capability due to positive temperature coefficient in VcEsat·Low EMI
·Qualified according to JESD-022 for target applications·Pb-free lead plating: RoHScompliant
*Complete product spectrum and PSpice
IHW50N65R5XKSA1 Applications
·Induction cooking
nverterized microwave ovens
·Resonant converters
