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STGB20NB41LZT4

STGB20NB41LZT4

STGB20NB41LZT4

STMicroelectronics

STGB20NB41LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB20NB41LZT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 20V
Max Power Dissipation200W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Current Rating20A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB20
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time1 μs
Transistor Application AUTOMOTIVE IGNITION
Rise Time220ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 12.1 μs
Collector Emitter Voltage (VCEO) 382V
Max Collector Current 40A
Collector Emitter Breakdown Voltage442V
Collector Emitter Saturation Voltage2V
Max Breakdown Voltage 442V
Turn On Time1220 ns
Test Condition 320V, 20A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Turn Off Time-Nom (toff) 16100 ns
Gate Charge46nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 1μs/12.1μs
Switching Energy 5mJ (on), 12.9mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2186 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.669242$0.669242
10$0.631360$6.3136
100$0.595623$59.5623
500$0.561908$280.954
1000$0.530102$530.102

STGB20NB41LZT4 Product Details

STGB20NB41LZT4 Description


STGB20NB41LZT4 is an N-channel clamped 20A D2PAK internally clamped powerMESHTM IGBT. Using the latest high voltage technology based on a patented strip layout, S STMicroelectronics has designed an advanced family of IGBTs, the TM PowerMESH" IGBTs, with outstanding performances.' The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies ESD protection.



STGB20NB41LZT4 Features


Polysilicon gate voltage driven

Low threshold voltage

Low on-voltage drop

Low gate charge

High current capability

The high voltage clamping feature



STGB20NB41LZT4 Applications


Automotive Ignition

Industrial transport (non-car & non-light truck)

Enterprise systems

Datacenter & enterprise computing

Personal electronics

Tablets


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