IRG4BC30FD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC30FD1PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
31A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
24ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
31A
Reverse Recovery Time
46 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
46 ns
Test Condition
480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 17A
Turn Off Time-Nom (toff)
740 ns
Gate Charge
57nC
Current - Collector Pulsed (Icm)
124A
Td (on/off) @ 25°C
22ns/250ns
Switching Energy
370μJ (on), 1.42mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
15.24mm
Length
10.54mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4344 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.76000
$1.76
500
$1.7424
$871.2
1000
$1.7248
$1724.8
1500
$1.7072
$2560.8
2000
$1.6896
$3379.2
2500
$1.672
$4180
IRG4BC30FD1PBF Product Details
IRG4BC30FD1PBF Description
IRG4BC30FD1PBF is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IRG4BC30FD1PBF is -55°C~150°C TJ and its maximum power dissipation is 100W. IRG4BC30FD1PBF has 3 pins and it is available in Tube packaging way. The Collector Emitter Saturation Voltage of IRG4BC30FD1PBF is 1.8V.
IRG4BC30FD1PBF Features
Switching Energy: 370μJ (on), 1.42mJ (off)
Gate-Emitter Thr Voltage-Max: 6V
Test Condition: 480V, 17A, 23 Ω, 15V
Max Collector Current: 31A
Voltage - Rated DC: 600V
IRG4BC30FD1PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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