IXGP30N120B3 Description
PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.
IXGP30N120B3 Applications
• PLC analog input modules
• Weigh scales and strain-gauge digitizers
• Temperature, pressure measurement
• Lab instrumentation
• Process analytics
IXGP30N120B3 Features
• High input voltage (AC187 - 528V)
• Peak load possible
FCA50F, FCA75F (at AC240 - 528V)
FCA200F (at AC323 - 528V)
• Harmonic attenuator (Complies with IEC61000-3-2) (FCA200F)
• DIN rail attachment (Optional)
• Small size
