IGC10T65QEX1SA1 Description
IGC10T65QEX1SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGC10T65QEX1SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGC10T65QEX1SA1 has the common source configuration.
IGC10T65QEX1SA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IGC10T65QEX1SA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
