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FZ3600R17HP4B2BOSA2

FZ3600R17HP4B2BOSA2

FZ3600R17HP4B2BOSA2

Infineon Technologies

FZ3600R17HP4B2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ3600R17HP4B2BOSA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Screw
Package / Case Module
Number of Pins 9
Published 2002
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Power Dissipation21kW
Halogen Free Not Halogen Free
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 3.6kA
Collector Emitter Saturation Voltage2.25V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:46 items

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FZ3600R17HP4B2BOSA2 Product Details

FZ3600R17HP4B2BOSA2 Description


FZ3600R17HP4B2BOSA2 is a type of IHM-B module with a Trench/Fieldstop IGBT4 and emitter-controlled diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FZ3600R17HP4B2BOSA2 IGBT module provides optimum performance for resonant inverter applications, high-power converters, traction drives, and wind turbines.



FZ3600R17HP4B2BOSA2 Features


Extended operating temperature Tvjop

Low VCEsat

Tvjop=150°C

High power density



FZ3600R17HP4B2BOSA2 Applications


Resonant inverter applications

High power converters

Traction drives

Wind turbines


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