FZ2400R17KE3NOSA1 Description
FZ2400R17KE3NOSA1 is a 1700v IGBT-Modules. The FZ2400R17KE3NOSA1 can be applied in Industrial, Test & Measurement, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ2400R17KE3NOSA1 is in the tray package with 12kW Power dissipation.
FZ2400R17KE3NOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1700v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 3200A
Repetitive peak collector current Tp = 1 ms: 4800A
Total power dissipation Tc = 25°C: 12kW
Gate-emitter peak voltage: ±20V
FZ2400R17KE3NOSA1 Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Enterprise machine
Personal electronics
Home theater & entertainment
