FF300R12KE4B2HOSA1 Description
The FF300R12KE4B2HOSA1 is a 1200 V, 300 A dual IGBT module, 62mmC-series module with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die. A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module.
FF300R12KE4B2HOSA1 Features
Optimized switching characteristic like softness and reduced switching losses
Existing packages with higher current capability
RoHS compliant
Superior solution for frequency controlled inverter drives
UL/CSA Certification with UL1557 E83336
Operating temperature up to 150 °C
Flexibility
Optimal electrical performance
Highest reliability
FF300R12KE4B2HOSA1 Applications
