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BSM200GA120DN2HOSA1

BSM200GA120DN2HOSA1

BSM200GA120DN2HOSA1

Infineon Technologies

BSM200GA120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM200GA120DN2HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
Published 1998
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count5
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single Switch
Case Connection ISOLATED
Power - Max 1550W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 4mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 300A
Turn On Time210 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 200A
Turn Off Time-Nom (toff) 630 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:82 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$127.45800$1274.58

BSM200GA120DN2HOSA1 Product Details

BSM200GA120DN2HOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.


BSM200GA120DN2HOSA1 Features

? Single switch

? Including fast free-wheeling diodes

? Package with insulated metal base plate


BSM200GA120DN2HOSA1 Applications

·High power converters

·Motor drives

·Solar applications

·UPS systems


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