FS150R07N3E4BOSA1 Description
The FS150R07N3E4BOSA1 is an EconoPACK?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FS150R07N3E4BOSA1 Features
Electrical Features
Trench IGBT4
Tvjop=150°C
Increased blocking voltage capability to 650V
High Short Circuit Capability, Self Limiting Short Circuit Current
Mechanical Features
Solder Contact Technology
Standard Housing
Integrated NTC temperature sensor
Copper Base Plate
FS150R07N3E4BOSA1 Applications
Motor Drives
As a switch
Air conditioners
Refrigerators
Electric cars
