FS100R12KS4BOSA1 Description
FS100R12KS4BOSA1 is an IGBT-Module. The transistor FS100R12KS4BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS100R12KS4BOSA1 is in the tray package with 660W Power dissipation.
FS100R12KS4BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C : 130A
Repetitive peak collector current Tp = 1 ms: 200A
Total power dissipation Tc = 25°C: 660W
Gate-emitter peak voltage: ±20V
FS100R12KS4BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Home theater & entertainment
