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FZ400R17KE4HOSA1

FZ400R17KE4HOSA1

FZ400R17KE4HOSA1

Infineon Technologies

FZ400R17KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ400R17KE4HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Surface MountNO
Transistor Element Material SILICON
PackagingBulk
Published 2002
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count5
JESD-30 Code R-XUFM-X3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Turn On Time355 ns
Collector Current-Max (IC) 550A
Turn Off Time-Nom (toff) 930 ns
Collector-Emitter Voltage-Max 1700V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:91 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$122.56800$1225.68

FZ400R17KE4HOSA1 Product Details

FZ400R17KE4HOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FZ400R17KE4HOSA1 Applications

·High Power Converters

·Motor Drives

·UPS Systems

·Wind Turbines

FZ400R17KE4HOSA1 Features

·Extended Operation TemperatureTvjop

·Low VCEsat

·Unbeatable Robustness

·VCEsat with positive Temperature Coefficient

Mechanical Features

·4kV AC 1min Insulation

·Package with CTI>400

·High Creepage and Clearance Distances

·Isolated Base Plate

·Standard Housing


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