FF225R17ME3BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF225R17ME3BOSA1 Applications
? UPSsystems
? Highpowerconverters
? Motordrives
? Windturbines
FF225R17ME3BOSA1 Features
? 500-mA low-dropout regulator with enable
? Available in fixed and adjustable (1.2-V to 5.5-V) versions
? High PSRR (50 dB at 10 kHz)
? Ultralow noise (33 μVRMS, TPS79530)
? Fast start-up time (50 μs)
? Stable with a 1-μF ceramic capacitor
? Excellent load and line transient response
? Low dropout voltage (110 mV at full load,
TPS79530)
? 6-pin SOT-223 and 3-mm × 3-mm VSON
packages
