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DF1000R17IE4BOSA1

DF1000R17IE4BOSA1

DF1000R17IE4BOSA1

Infineon Technologies

DF1000R17IE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

DF1000R17IE4BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 50 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Max Power Dissipation6.25kW
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count12
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 6250W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 1.39kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
Turn Off Time-Nom (toff) 1890 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 81nF @ 25V
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:45 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$593.581047$593.581047
10$574.062908$5740.62908
25$570.072402$14251.81005
50$566.109634$28305.4817
100$554.465851$55446.5851
500$514.824374$257412.187

DF1000R17IE4BOSA1 Product Details

DF1000R17IE4BOSA1 Description


DF1000R17IE4BOSA1, supplied by Utmel Electronics and made by Infineon. It falls within the category of electronic components, ICs. It is used in a variety of industries, including automotive Advanced driver assistance systems (ADAS) and commercial systems. business projectors electronic devices entertainment & home theater. And the primary criteria for this component are: Operating temperature range: -40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:6.25kW; Voltage Vces:2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV;

It is also environmentally friendly and RoHS compliant (lead free).



DF1000R17IE4BOSA1 Features


  • Low V(cesat)

  • UL recognized

  • V(vj op) = 150°C

  • High DC Stability

  • Copper Base Plate

  • High Current Density

  • Low Switching Losses

  • Package with CTI > 400

  • High Creepage and Clearance Distances

  • Extended Operation Temperature T(tvj op)

  • High Power and Thermal Cycling Capability



DF1000R17IE4BOSA1 Applications


  • Automotive

  • Enterprise systems

  • Personal electronics


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