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FF900R12IP4DVBOSA1

FF900R12IP4DVBOSA1

FF900R12IP4DVBOSA1

Infineon Technologies

FF900R12IP4DVBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF900R12IP4DVBOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 50 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Series PrimePack™2
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Number of Elements 2
Configuration 2 Independent
Element ConfigurationDual
Case Connection ISOLATED
Power - Max 5100W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 900A
Turn On Time370 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn Off Time-Nom (toff) 1300 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:41 items

Pricing & Ordering

QuantityUnit PriceExt. Price
3$622.51667$1867.55001

FF900R12IP4DVBOSA1 Product Details

FF900R12IP4DVBOSA1 Description


Trench/Fieldstop IGBT4 with an expanded Emitter Controlled 4 diode and NTC in the PrimePACKTM2 module



FF900R12IP4DVBOSA1 Features


?4 kV AC Insulation for 1 minute


?Package with CTI > 400


?Low Clearance Distances and High Creepage


?Thermal cycling capability and high power


?Low Power Density




FF900R12IP4DVBOSA1 Applications


Commercial vehicles for agriculture


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