FF900R12IP4BOSA2 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF900R12IP4BOSA2 Applications
·Auxiliary Inverters
·High Power Converters
·Motor Drives Traction Drives
·UPS Systems
·Wind Turbines
FF900R12IP4BOSA2 Features
·Extended Operation Temperature Tyop
·High DC Stability
·High Short Circuit CapabilitySelf Limiting Short Circuit Current
·Unbeatable Robustness
·VcEsatwith positiveTemperature Coefficient
·Low VCEsat
Mechanical Features
·4kVAC 1min Insulation
·Package withCTI>400
·High Creepage and Clearance Distances
·High Power and Thermal Cycling Capability
·High Power Density
