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FZ400R65KE3NOSA1

FZ400R65KE3NOSA1

FZ400R65KE3NOSA1

Infineon Technologies

FZ400R65KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ400R65KE3NOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Operating Temperature-50°C~125°C
Published 2002
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Configuration Half Bridge
Element ConfigurationDual
Power - Max 8350W
Halogen Free Not Halogen Free
Input Standard
Collector Emitter Voltage (VCEO) 6.5kV
Max Collector Current 400A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 6500V
Current - Collector (Ic) (Max) 800A
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 400A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 110nF @ 25V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:34 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FZ400R65KE3NOSA1 Product Details

FZ400R65KE3NOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FZ400R65KE3NOSA1 Applications

·Medium voltage converters

·Traction drives

FZ400R65KE3NOSA1 Features

·Low VcEsat

Mechanical Features

·AlSiC base plate for increased thermal cycling capability

*Extended storage temperature down to Tstg= -55°℃

·Package with CTI>600

·Package with enhanced insulation of 10.4kV AC10s

·High creepage and clearance distances


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