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APTGT50H60RT3G

APTGT50H60RT3G

APTGT50H60RT3G

Microsemi Corporation

POWER MOD IGBT3 FULL BRIDGE SP3

SOT-23

APTGT50H60RT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Published 1999
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature175°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation176W
Number of Elements 1
Configuration Full Bridge Inverter
Input Single Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage600V
Input Capacitance3.15nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
NTC ThermistorYes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
VCEsat-Max 1.9 V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:134 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$45.20200$4520.2

About APTGT50H60RT3G

The APTGT50H60RT3G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOD IGBT3 FULL BRIDGE SP3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGT50H60RT3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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