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FZ750R65KE3NOSA1

FZ750R65KE3NOSA1

FZ750R65KE3NOSA1

Infineon Technologies

FZ750R65KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ750R65KE3NOSA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 9
Transistor Element Material SILICON
Operating Temperature-50°C~125°C
Published 2002
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count9
Number of Elements 3
Configuration Single
Power - Max 14500W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 6.5kV
Max Collector Current 750A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 6500V
Turn On Time1200 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 750A
Turn Off Time-Nom (toff) 8100 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 205nF @ 25V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:37 items

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FZ750R65KE3NOSA1 Product Details

FZ750R65KE3NOSA1 Description


FZ750R65KE3NOSA1 is a type of highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply, and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



FZ750R65KE3NOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



FZ750R65KE3NOSA1 Applications


Medium-voltage converters

Traction drives


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