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FF225R12ME4PBPSA1

FF225R12ME4PBPSA1

FF225R12ME4PBPSA1

Infineon Technologies

FF225R12ME4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF225R12ME4PBPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~150°C TJ
Published 2002
Series EconoDUAL™ 3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 20mW
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 450A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:75 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$160.425169$160.425169
10$155.150066$1551.50066
25$154.071565$3851.789125
50$153.000561$7650.02805
100$149.853635$14985.3635
500$139.139866$69569.933

FF225R12ME4PBPSA1 Product Details

FF225R12ME4PBPSA1 Description

FF225R12ME4PBPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF225R12ME4PBPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FF225R12ME4PBPSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FF225R12ME4PBPSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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