RFD16N05SM Description
RFD16N05 and RFD16N05SM N channel power MOSFET are manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for applications such as switching voltage regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
RFD16N05SM Features
16A, 50V
rDS(ON)= 0.047Ω
Temperature Compensating PSPICE? Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175°C Operating Temperature
Related Literature
?- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
RFD16N05SM Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe