BC818K40E6327HTSA1 Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 170MHz.Input voltage breakdown is available at 25V volts.During maximum operation, collector current can be as low as 500mA volts.
BC818K40E6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC818K40E6327HTSA1 Applications
There are a lot of Infineon Technologies BC818K40E6327HTSA1 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
