PBSS5330X,115 Overview
In this device, the DC current gain is 175 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 320mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330X,115 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5330X,115 Applications
There are a lot of Nexperia USA Inc. PBSS5330X,115 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
