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2N5681

2N5681

2N5681

Microsemi Corporation

2N5681 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5681 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
JEDEC-95 Code TO-5
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 100V
DC Current Gain-Min (hFE) 5
RoHS StatusNon-RoHS Compliant
In-Stock:322 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$20.45550$2045.55

2N5681 Product Details

2N5681 Overview


Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.The maximum collector current is 1A volts.

2N5681 Features


a transition frequency of 30MHz

2N5681 Applications


There are a lot of Microsemi Corporation 2N5681 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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