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AUIRG4BC30S-S

AUIRG4BC30S-S

AUIRG4BC30S-S

Infineon Technologies

AUIRG4BC30S-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRG4BC30S-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2010
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation100W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 34A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.6V
Turn On Time40 ns
Test Condition 480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Turn Off Time-Nom (toff) 1550 ns
Gate Charge50nC
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 22ns/540ns
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 590ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4819 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.53000$1.53
500$1.5147$757.35
1000$1.4994$1499.4
1500$1.4841$2226.15
2000$1.4688$2937.6
2500$1.4535$3633.75

AUIRG4BC30S-S Product Details

AUIRG4BC30S-S Description

AUIRG4BC30S-S transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AUIRG4BC30S-S MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies AUIRG4BC30S-S has the common source configuration.

AUIRG4BC30S-S Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

AUIRG4BC30S-S Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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