AUIRFR5305TRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
AUIRFR5305TRL Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Series
Automotive, AEC-Q101, HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
66ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
63 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
31A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.065Ohm
Drain to Source Breakdown Voltage
-55V
Avalanche Energy Rating (Eas)
280 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1866 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
AUIRFR5305TRL Product Details
AUIRFR5305TRL Description
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRFR5305TRL Features
● Advanced Planar Technology ● Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified* AUIRFR5305TRL Applications
● New Energy Vehicle ● Photovoltaic Generation ● Wind Power Generation ● Smart Grid ● Switching
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