AIKW50N65DH5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
AIKW50N65DH5XKSA1 Features
High speed H5 technology offering:
·Best-in-Class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation IGBTs·650V breakdown voltage·Low gate charge QG
·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximum junction temperature 175°C·Dynamically stress tested
·Qualified according to AEC-Q101·Green package(RoHS compliant)
.Complete product spectrum and PSpice
AIKW50N65DH5XKSA1 Applications
·Off-board charger·On-board charger·DC/DC converter
·Power-Factor correction
