AIKB30N65DH5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AIKB30N65DH5ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Status
Active
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
30A
IGBT Type
NPT
In-Stock:1576 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.364000
$4.364
10
$4.116981
$41.16981
100
$3.883944
$388.3944
500
$3.664099
$1832.0495
1000
$3.456697
$3456.697
AIKB30N65DH5ATMA1 Product Details
AIKB30N65DH5ATMA1 Description
AIKB30N65DH5ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the Collector Emitter Breakdown voltage of AIKB30N65DH5ATMA1 is 650V. AIKB30N65DH5ATMA1 has 2 pins and it is available in TO-263-3 packaging way. The IGBT Type of AIKB30N65DH5ATMA1 is NPT and its maximum collector current is 30A.
AIKB30N65DH5ATMA1 Features
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
IGBT copacked with RAPID1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Dynamic ally stress tested
Qualified according to AEC-Q101
Green package (RoHS compliant)
AIKB30N65DH5ATMA1 Applications
Off-board charger
On-board charger
DC/DC converter
Power-Factor correction
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