PBSS5350T,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 390mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 2A volts can be achieved.
PBSS5350T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5350T,215 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
