MMBT3906LT1HTSA1 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 250MHz.As a result, it can handle voltages as low as 40V volts.Collector current can be as low as 200mA volts at its maximum.
MMBT3906LT1HTSA1 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906LT1HTSA1 Applications
There are a lot of Infineon Technologies MMBT3906LT1HTSA1 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
