Name: ZXMHC10A07T8TA
Brand: Diodes Incorporated
SKU: ZXMHC10A07T8TA
Price: 1.01000 USD
Availability: InStock

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ZXMHC10A07T8TA

Manufacturer part number:ZXMHC10A07T8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 2N/2P-CH 100V 1A/0.8A SM8

Case Package:SOT-23

Datasheet:ZXMHC10A07T8TA Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Gull Wing
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	1Ohm
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	1.3W
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Current Rating	1.4A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZXMHC10A07T8
Pin Count	8
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	1.6 ns
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	138pF @ 60V
Current - Continuous Drain (Id) @ 25°C	1A 800mA
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Rise Time	2.1ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	3.3 ns
Turn-Off Delay Time	5.9 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.6mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

ZXMHC10A07T8TA Product Details

Diodes Inc. Transistors - FETs, MOSFETs - Arrays ZXMHC10A07T8TA is a high-performance MOSFET designed for use in a wide range of applications. This device features a 2N/2P-CH 100V 1A/0.8A SM8 configuration, making it ideal for use in power management, motor control, and other high-current applications. The device is designed to provide superior performance and reliability, with a low on-resistance of 0.8 ohms and a maximum operating temperature of 150°C. The device also features a low gate charge and a fast switching speed, making it suitable for high-frequency applications. The device is RoHS compliant and is available in a variety of packages, making it easy to integrate into any system.