SI1965DH-T1-E3

new-10%

Manufacturer part number:SI1965DH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 12V 1.3A SC70-6

Case Package:SOT-23

Datasheet:SI1965DH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	390MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1965
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	740mW
Turn On Delay Time	12 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 6V
Current - Continuous Drain (Id) @ 25°C	1.3A
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 8V
Rise Time	27ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	1.14A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	1.3A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free