TEXAS INSTRUMENTS CSD88537NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
SOT-23
CSD88537NDT Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
540.001716mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Max Power Dissipation
2.1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD88537
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Turn On Delay Time
6 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C
15A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
15ns
Fall Time (Typ)
19 ns
Turn-Off Delay Time
5 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.019Ohm
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Standard
Height
1.75mm
Length
4.9mm
Width
3.91mm
Thickness
1.58mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4168 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
250
$0.97396
$243.49
500
$0.86070
$430.35
750
$0.75199
$563.9925
CSD88537NDT Product Details
The Texas Instruments CSD88537NDT is a dual MOSFET, dual N channel transistor array designed for high-current applications. It features a maximum current rating of 15A, a maximum voltage rating of 60V, and a low on-resistance of 0.0125 ohms. The gate-source threshold voltage is 10V and the gate-drain threshold voltage is 3V. This device is ideal for use in power management, motor control, and other high-current applications. It is designed to provide superior performance and reliability in a wide range of operating conditions. The CSD88537NDT is a cost-effective solution for high-current applications.
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