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FZT753TA

FZT753TA

FZT753TA

Diodes Incorporated

FZT753TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT753TA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC -100V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-2A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT753
Number of Elements 1
Voltage 100V
Element ConfigurationSingle
Current 2A
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage100V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage-300mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -2A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10895 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.68000$0.68
500$0.6732$336.6
1000$0.6664$666.4
1500$0.6596$989.4
2000$0.6528$1305.6
2500$0.646$1615

FZT753TA Product Details

FZT753TA Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.Continuous collector voltages of -2A should be maintained to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.In this part, there is a transition frequency of 140MHz.There is a breakdown input voltage of 100V volts that it can take.The maximum collector current is 2A volts.

FZT753TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 140MHz

FZT753TA Applications


There are a lot of Diodes Incorporated FZT753TA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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